Semiconductor device

ABSTRACT

A semiconductor device has first second-conductivity-type high-concentration regions, second second-conductivity-type high-concentration regions, third second-conductivity-type high-concentration regions, and fourth second-conductivity-type high-concentration regions. The first connecting regions each connect a portion of each of the first second-conductivity-type high-concentration regions and a portion of each of the second second-conductivity-type high-concentration regions. The second connecting regions each connect a portion of each of the third second-conductivity-type high-concentration regions and a portion of each of the fourth second-conductivity-type high-concentration regions. A ratio of a mathematical area of the first connecting regions to a mathematical area of the second second-conductivity-type high-concentration regions is greater than a ratio of a mathematical area of the second connecting regions to a mathematical area of the fourth second-conductivity-type high-concentration regions.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2019-097087, filed on May 23, 2019, the entire contents of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

Embodiments of the invention relate to a semiconductor device.

2. Description of the Related Art

Silicon (Si) is used as a material for power semiconductor devices that control high voltage and/or large current. There are several types of power semiconductor devices such as bipolar transistors, insulated gate bipolar transistors (IGBTs), and metal oxide semiconductor field effect transistors (MOSFETs) that have an insulated gate formed by a three-layered structure including a metal, an oxide film, and a semiconductor material. These devices are selectively used according to an intended purpose.

For example, bipolar transistors and IGBTs have high current density compared to MOSFETs, and can be adapted for large current but cannot be switched at high speeds. In particular, the limit of switching frequency is about several kHz for bipolar transistors and about several tens of kHz for IGBTs. On the other hand, power MOSFETs have low current density compared to bipolar transistors and IGBTs, and are difficult to adapt for large current but can be switched at high speeds up to about several MHz.

Further, MOSFETs structurally differ from IGBTs, have a built-in parasitic diode formed by a pn junction between a p-type base region and an n⁻-type drift region, and may use this parasitic diode as a free-wheeling diode for protecting the MOSFET. Therefore, instances in which a MOSFET is used as an inverter device are gaining attention in terms of being economical since no external free-wheeling diode needs to be connected to the MOSFET.

There is a strong demand in the market for large-current, high-speed power semiconductor devices. Thus, IGBTs and power MOSFETs have been intensively developed and improved, and the performance of power devices has substantially reached the theoretical limit determined by the material. In terms of power semiconductor devices, semiconductor materials to replace silicon have been investigated and silicon carbide (SiC) has been focused on as a semiconductor material enabling production (manufacture) of a next-generation power semiconductor device having low ON voltage, high-speed characteristics, and high-temperature characteristics.

Silicon carbide is chemically a very stable semiconductor material, has a wide bandgap of 3 eV, and can be used very stably as a semiconductor material even at high temperatures. Further, silicon carbide has a critical field strength that is at least ten times greater than the critical field strength of silicon and therefore, is expected to be a semiconductor material capable of sufficiently reducing ON resistance. Such characteristics of silicon carbide are shared by other wide bandgap semiconductor materials that have a bandgap wider than that of silicon (hereinafter, wide bandgap semiconductor material).

A structure of a conventional semiconductor device will described taking an n-channel MOSFET that uses silicon carbide (SiC) as a wide bandgap material as an example. FIG. 22 is a plan view of a layout when the conventional semiconductor device is viewed from a front side of a semiconductor substrate. In FIG. 22, a p-type base region 134 b of a sensing effective region 112 a and a p-type base region 134 b′ of a main non-operating region 101 b are indicated by mutually differing hatching. FIG. 23 is a cross-sectional view of a structure of an active region in FIG. 22.

FIG. 23 depicts cross-sectional view of a structure of a main effective region 101 a and a current sensing portion 112 (cross-sectional view along cutting line X101-X102-X103-X104-X105). The p-type base region 134 b′ and a p⁺-type region 162 b′ are provided directly beneath a sensing non-operating region 112 b and while cross-sectional views of the structure directly beneath a temperature sensing portion 113 and directly beneath a gate pad 121 b are not depicted, the p-type base region 134 b′ and the p⁺-type region 162 b′ are provided similarly. A cross-sectional view of the structure of the temperature sensing portion 113 is also not depicted.

A conventional semiconductor device 120 depicted in FIGS. 22 and 23 has in an active region 101 of a single semiconductor substrate 110 containing silicon carbide, a main semiconductor element 111 and one or more circuit portions for protecting/controlling the main semiconductor element 111. The main semiconductor element 111 is a vertical MOSFET and is configured by plural unit cells (non-depicted functional units) disposed adjacent to one another in an effective region (hereinafter, main effective region) 101 a of the active region 101.

A source pad 121 a of the main semiconductor element 111 is provided on a front surface of the semiconductor substrate 110, in the main effective region 101 a. The circuit portions for protecting/controlling the main semiconductor element 111 are disposed in a region (hereinafter, main non-operating region) 101 b of the active region 101, excluding the main effective region 101 a. The main non-operating region 101 b is free of unit cells of the main semiconductor element 111.

A surface area of the main non-operating region 101 b is large as compared to a surface area of a main non-operating region of a semiconductor device (semiconductor device in which only a gate pad is disposed in the main non-operating region) without the circuit portions for protecting/controlling the main semiconductor element 111. The circuit portions for protecting/controlling the main semiconductor element 111, for example, may be high-function portions such as the current sensing portion 112, the temperature sensing portion 113, an over-voltage protecting portion (not depicted), and an arithmetic circuit portion (not depicted).

The current sensing portion 112 is a vertical MOSFET that includes unit cells having a configuration similar to a configuration of the unit cells (functional units of the element) of the main semiconductor element 111, of a quantity fewer than a quantity of the unit cells in the main semiconductor element 111. The current sensing portion 112 is disposed to be separate from the main semiconductor element 111. The current sensing portion 112 operates under conditions identical to those of the main semiconductor element 111 and detects overcurrent (OC) flowing in the main semiconductor element 111.

The unit cells of the current sensing portion 112 are disposed in a region (hereinafter, sensing effective region) 112 a of a portion of the current sensing portion 112 directly beneath an electrode pad (hereinafter, OC pad) 122. A region (hereinafter, sensing non-operating region) 112 b directly beneath the OC pad 122 and excluding the sensing effective region 112 a is a region free of unit cells of the current sensing portion 112 and does not function as the current sensing portion 112.

In substantially the entire sensing non-operating region 112 b, the p-type base region 134 b′ is provided in a surface region of the semiconductor substrate 110. The p⁺-type region 162 b′ is provided between the p-type base region 134 b′ and an n⁻-type drift region 132. The p-type base region 134 b′ and the p⁺-type region 162 b′ of the sensing non-operating region 112 b are separated from the sensing effective region 112 a to a greater extent than is an n⁻-type region 132 b of a surface region of the semiconductor substrate 110.

The p-type base region 134 b′ of the sensing non-operating region 112 b is connected to a p-type base region 134 a of the main semiconductor element 111 and is fixed at a source potential of the main semiconductor element 111. Further, the p-type base region 134 b′ and the p⁺-type region 162 b′ of the sensing non-operating region 112 b extend throughout a region, excluding the sensing effective region 112 a of the main non-operating region 101 b and are disposed directly beneath electrode pads other than the source pad 121 a.

The electrode pads other than the source pad 121 a are provided on the front surface of the semiconductor substrate 110, in the main non-operating region 101 b. In FIG. 22, the source pad 121 a, the gate pad 121 b, the OC pad 122, and electrode pads (an anode pad 123 a and a cathode pad 123 b) of the temperature sensing portion 113 are indicated by “S”, “G”, “OC”, “A”, and “K”, respectively. Reference numeral 102 is an edge termination region.

Reference characters 133 a to 150 a, 161 a, 162 a are parts of a trench-gate MOSFET configuring the main semiconductor element 111. Reference characters 133 b to 150 b, 161 b, 162 b are parts of a trench-gate MOSFET configuring the current sensing portion 112. Reference numerals 131, 132, 151, 170 are respectively an n⁺-type drain region, an n⁻-type drift region, a drain electrode, and a field insulating film common to the main semiconductor element 111 and the current sensing portion 112.

The p⁺-type regions 161 a, 162 a in the main semiconductor element 111 are provided to mitigate electric field at bottoms of trenches 137 a. While not depicted, the p⁺-type regions 162 a partially extend toward the trenches to be connected to the p⁺-type regions 161 a. As a result, the p⁺-type regions 162 a and the p⁺-type regions 161 a have a common, stabilized electric potential. Further, in the current sensing portion 112 as well, while not depicted, with a design size similar to that of the main semiconductor element 111, the p⁺-type regions 162 b partially extend toward the trenches to be connected to the p⁺-type regions 161 b.

Further, as compared to a planar gate structure in which a channel is formed along the front surface of the semiconductor substrate accompanying large current, a trench gate structure in which a channel (inverse layer) is formed in a direction orthogonal to the front surface of the semiconductor substrate, along a side wall of a trench is advantageous in terms of cost. A reason for this is that a trench gate structure enables unit cell (configuration unit of an element) density per unit area to be increased and thereby, enables current density per unit area to be increased.

A rate of temperature rise relative to a volume occupied by the unit cells increases by an extent to which device current density is increased and therefore, to enhance discharge efficiency and stabilize reliability, a double-sided cooling structure is necessary. Further, with consideration of reliability, on a single semiconductor substrate with a vertical MOSFET that is a main semiconductor element, a high-function structure in which high-function portions such as the current sensing portion, the temperature sensing portion, and the over-voltage protecting portion have to be disposed as circuit portions for protecting/controlling a main semiconductor element.

As an example of a conventional semiconductor device, devices have been proposed that include a main non-operating region in which high-function portions such as a current sensing portion, a temperature sensing portion, and an over-voltage protecting portion are provided, the main non-operating region being provided on a single semiconductor substrate having a main semiconductor element that has a planar gate structure (for example, refer to Japanese Laid-Open Patent Publication No. 2017-079324. In Japanese Laid-Open Patent Publication No. 2017-079324, a configuration is disclosed in which electrode pads other than a source pad and an OC pad are collectively disposed at one edge of the semiconductor substrate.

As another example of a conventional semiconductor device, a semiconductor device has been proposed in which a first p-type base region that is in contact with a p-type base layer is provided and a second p-type base region is further provided so as to surround a trench bottom portion, thereby enabling application of high electric field to a gate insulating film at the trench bottom portion to be prevented (for example, refer to International Publication No. WO 2017/064949).

SUMMARY OF THE INVENTION

According to an embodiment of the invention, a semiconductor substrate containing a semiconductor material having a bandgap wider than that of silicon, and having a first main surface and a second main surface opposite to the first main surface, a first first-conductivity-type region of a first conductivity type, provided in the semiconductor substrate, a first second-conductivity-type region of a second conductivity type, provided between the first main surface of the semiconductor substrate and the first first-conductivity-type region, a plurality of first trenches in the shape of stripes penetrating the first second-conductivity-type region from the first main surface of the semiconductor substrate and reaching the first first-conductivity-type region, a plurality of first second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of first second-conductivity-type high-concentration regions being provided between and in contact with the first second-conductivity-type region and the first first-conductivity-type region in a depth direction orthogonal to the first main surface of the substrate, between a corresponding pair of adjacent first trenches of the plurality of first trenches in a direction parallel to the first main surface, the each of the plurality of first second-conductivity-type high-concentration regions having an impurity concentration higher than an impurity concentration of the first second-conductivity-type region, a plurality of second second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of second second-conductivity-type high-concentration regions being provided in the first first-conductivity-type region, and facing a corresponding one of the plurality of first trenches in the depth direction, a plurality of first connecting regions each connecting a corresponding one of the first second-conductivity-type high-concentration regions and a corresponding one of the plurality of the second second-conductivity-type high-concentration regions, a first insulated gate field effect transistor having the first first-conductivity-type region as a drift region and the first second-conductivity-type region as a base region, the first insulated gate field effect transistor being constituted by a plurality of cell units each having a cell structure, a first source pad of the first insulated gate field effect transistor, provided on the first main surface of the semiconductor substrate, and electrically connected to the first second-conductivity-type region, a second second-conductivity-type region of the second conductivity type, provided in a region different from the first second-conductivity-type region and between the first main surface of the semiconductor substrate and the first first-conductivity-type region, a plurality of second trenches in the shape of stripes penetrating the second second-conductivity-type region from the first main surface of the semiconductor substrate and reaching the first first-conductivity-type region, a plurality of third second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of third second-conductivity-type high-concentration regions being provided between and in contact with the second second-conductivity-type region and the first first-conductivity-type region in the depth direction, between a corresponding pair of adjacent second trenches of the plurality of second trenches in the direction parallel to the first main surface, the each of the plurality of third second-conductivity-type high-concentration regions having an impurity concentration higher than an impurity concentration of the second second-conductivity-type region, a plurality of fourth second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of fourth second-conductivity-type high-concentration regions being provided in the first first-conductivity-type region, and facing a corresponding one of the plurality of second trenches in the depth direction, a plurality of second connecting regions each connecting a corresponding one of the plurality of third second-conductivity-type high-concentration regions and a corresponding one of the plurality of fourth second-conductivity-type high-concentration regions, a second insulated gate field effect transistor having the first first-conductivity-type region as a drift region and the second second-conductivity-type region as a base region, the second insulated gate field effect transistor being constituted by a plurality of cell units each having a cell structure same as the cell structure of the each of the plurality of unit cells of the first insulated gate field effect transistor, a total number of the plurality of unit cells of the second insulated gate field effect transistor being smaller than a total number of the plurality of unit cells of the first insulated gate field effect transistor, a second source pad of the second insulated gate field effect transistor, provided on the first main surface of the semiconductor substrate to be separate from the first source pad and electrically connected to the second second-conductivity-type region, and a drain electrode that is common to the first insulated gate field effect transistor and the second insulated gate field effect transistor, and electrically connected to the second main surface of the semiconductor substrate. A ratio of an area of the plurality of first connecting regions to an area of the plurality of the second second-conductivity-type high-concentration regions is greater than a ratio of an area of the plurality of second connecting regions to an area of the plurality of fourth second-conductivity-type high-concentration regions.

In the embodiment, a first length of each of the plurality of first connecting regions in a direction in which each of the plurality of first trenches extends is wider than a second length of each of the plurality of second connecting regions in a direction in which each of the plurality of second trenches extends.

In the embodiment, the first length is at least two times the second length.

In the embodiment, a total number of the plurality of the first connecting regions is greater than a total number of the plurality of the second connecting regions.

In the embodiment, the total number of the plurality of the first connecting regions is at least two times greater than the total number of the plurality of the second connecting regions.

In the embodiment, the second insulated gate field effect transistor detects overcurrent flowing in the first insulated gate field effect transistor.

Objects, features, and advantages of the present invention are specifically set forth in or will become apparent from the following detailed description of the invention when read in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of a layout when a semiconductor device according to a first embodiment is viewed from a front side of a semiconductor substrate.

FIG. 2 is a cross-sectional view of a structure along cutting line A-A′ in FIG. 4 depicting a cross-section of the structure of an active region in FIG. 1.

FIG. 3 is a cross-sectional view of a portion along cutting line B-B′ in FIG. 4 depicting a cross-section of the structure of the active region in FIG. 1.

FIG. 4 is a plan view of a portion along cutting line C-C′ in FIG. 2 depicting a plan view of the structure of the active region in FIG. 1.

FIG. 5 is a plan view of a portion along cutting line C-C′ in FIG. 2 depicting a plan view of the structure of the active region in FIG. 1.

FIG. 6 is a cross-sectional view of the structure of the active region in FIG. 1.

FIG. 7 is another example of a cross-sectional view of the structure of the active region in FIG. 1.

FIG. 8 is a circuit diagram depicting an equivalent circuit of the semiconductor device according to the first embodiment.

FIG. 9 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 10 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 11 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 12 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 13 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 14 is a cross-sectional view of the semiconductor device according to the first embodiment during manufacture.

FIG. 15 is a plan view of a layout when a semiconductor device according to a second embodiment is viewed from the front side of the semiconductor substrate.

FIG. 16 is a plan view of a layout when a semiconductor device according to a third embodiment is viewed from the front side of the semiconductor substrate.

FIG. 17 is a plan view of a layout when a semiconductor device according to a fourth embodiment is viewed from the front side of the semiconductor substrate.

FIG. 18 is a plan view of another example of the layout when the semiconductor device according to the fourth embodiment is viewed from the front side of the semiconductor substrate.

FIG. 19 is a plan view of another example of the layout when the semiconductor device according to the fourth embodiment is viewed from the front side of the semiconductor substrate.

FIG. 20 is a cross-sectional view of a configuration of a semiconductor device according to a fifth embodiment.

FIG. 21 is a characteristics diagram of an amount of interrupting current due to reverse recovery resistance of an example.

FIG. 22 is a plan view of a layout when a conventional semiconductor device is viewed from a front side of a semiconductor substrate.

FIG. 23 is a cross-sectional view of a structure of an active region in FIG. 22.

DETAILED DESCRIPTION OF THE INVENTION

First, problems associated with the conventional techniques will be discussed. In the conventional semiconductor device 120, as described above, in the current sensing portion 112, with a design size similar to that of the main semiconductor element 111, the p⁺-type regions 162 b partially extend toward the trenches to be connected to the p⁺-type regions 161 b. Therefore, in the current sensing portion 112, when a parasitic diode configured by pn junctions between the p-type base region 134 b, the p⁺-type regions 162 b, and the n⁻-type drift region is energized, forward voltage of the parasitic diode is lower than that of a parasitic diode of the main semiconductor element 111.

When the main semiconductor element 111 is OFF (during reverse recovery) and voltage that is negative with respect to the source electrode of the main semiconductor element 111 is applied to the drain electrode 151, the parasitic diode of the main semiconductor element 111 conducts and the parasitic diode of the current sensing portion 112 also conducts. Since the forward voltage of the parasitic diode of the current sensing portion 112 is low, the parasitic diode of the current sensing portion 112 conducts sooner than the parasitic diode of the p-type base region of the main semiconductor element 111. At this time, positive holes (holes) generated by the main non-operating region 101 b flow into the sensing effective region 112 a and positive hole current (reverse recovery current) concentrates in the current sensing portion 112. Therefore, the lower is the forward voltage of the parasitic diode of the current sensing portion 112, the larger is the current that flows to and concentrates in the current sensing portion 112, and the current sensing portion 112 is easily destroyed.

Embodiments of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings. In the present description and accompanying drawings, layers and regions prefixed with n or p mean that majority carriers are electrons or holes. Additionally, + or − appended to n or p means that the impurity concentration is higher or lower, respectively, than layers and regions without + or −, and represents one example. In the description of the embodiments below and the accompanying drawings, main portions that are identical will be given the same reference numerals and will not be repeatedly described.

A semiconductor device according to a first embodiment is configured using a semiconductor (wide bandgap material) having a bandgap wider than that of silicon (Si) as a semiconductor material. A structure of the semiconductor device according to the first embodiment will be described taking, as an example, a case in which, for example, silicon carbide (SiC) is used as a wide bandgap material. FIG. 1 is a plan view of a layout when the semiconductor device according to the first embodiment is viewed from a front side of a semiconductor substrate. In FIG. 1, a p-type base region (second second-conductivity-type region) 34 b of a sensing effective region (second effective region) 12 a and a p-type low-dose region (third second-conductivity-type region) 63 of a main non-operating region 1 b are depicted in mutually different hatching (Similarly in FIGS. 15 to 20).

A semiconductor device 20 according to the first embodiment and depicted in FIG. 1 has a main semiconductor element (first insulated gate field effect transistor) 11 and one or more circuit portions for protecting/controlling the main semiconductor element 11, in an active region 1 of a single semiconductor substrate (semiconductor chip) 10. The main semiconductor element 11 is a vertical MOSFET in which in an ON state, drift current flows in a depth direction Z of a semiconductor substrate 10. The main semiconductor element 11 is configured by plural unit cells (functional units of the element) connected in parallel by a source pad (first source pad) 21 a.

The unit cells of the main semiconductor element 11 are disposed adjacent to one another in a direction parallel to a front surface of the semiconductor substrate 10. The main semiconductor element 11 performs a main operation of the semiconductor device 20 according to the first embodiment. The main semiconductor element 11 is disposed in an effective region (main effective region: first effective region) 1 a of the active region 1. The main effective region 1 a is a region through which a main current of the main semiconductor element 11 flows when the main semiconductor element 11 is ON. The main effective region 1 a, for example, has a substantially rectangular planar shape and occupies most of the surface area of the active region 1.

The circuit portions for protecting/controlling the main semiconductor element 11, for example, are high-function portions such as a current sensing portion (second insulated gate field effect transistor) 12, a temperature sensing portion 13, an over-voltage protecting portion (not depicted), and an arithmetic circuit portion (not depicted), and are disposed in the main non-operating region 1 b of the active region 1. The main non-operating region 1 b is a region free of unit cells of the main semiconductor element 11 and does not function as the main semiconductor element 11. The main non-operating region 1 b, for example, has a substantially rectangular planar shape, and is disposed between the main effective region 1 a and an edge termination region 2.

The edge termination region 2 is a region between the active region 1 and an edge of the semiconductor substrate 10, surrounds a periphery of the active region 1, mitigates electric field at the front side of the semiconductor substrate 10, and sustains a breakdown voltage. In the edge termination region 2, for example, a voltage withstanding structure (not depicted) such as a field limiting ring (FLR), a junction termination extension (JTE) structure, etc. is disposed. The breakdown voltage is a voltage limit at which no errant operation or destruction of the element occurs.

The source pad (electrode pad) 21 a of the main semiconductor element 11 is disposed on the front surface of the semiconductor substrate 10, in the main effective region 1 a. The main semiconductor element 11 has a greater current capacity as compared to other circuit portions. Therefore, the source pad 21 a of the main semiconductor element 11 has a planar shape substantially like that of the main effective region 1 a and covers substantially an entire area of the main effective region 1 a. The source pad 21 a of the main semiconductor element 11 is disposed to be separate from electrode pads other than the source pad 21 a.

The electrode pads other than the source pad 21 a are disposed to be separate from the edge termination region 2 and to be separate from one another, on the front surface of the semiconductor substrate 10 in the main non-operating region 1 b. The electrode pads other than the source pad 21 a are the gate pad 21 b of the main semiconductor element 11, an electrode pad (hereinafter, OC pad (second source pad)) 22 of the current sensing portion 12, electrode pads (hereinafter, anode pad and cathode pad) 23 a, 23 b of the temperature sensing portion 13, an electrode pad (hereinafter, OV pad (not depicted)) of the over-voltage protecting portion, and an electrode pad (not depicted) of the arithmetic circuit portion.

The electrode pads other than the source pad 21 a, for example, have a substantially rectangular planar shape and a surface area necessary for bonding terminal pins 48 b, 48 c described hereinafter, wiring, etc. FIG. 1 depicts a case in which the electrode pads other than the source pad 21 a are disposed in a row along a border between the main non-operating region 1 b and the edge termination region 2 (similarly in FIGS. 15 to 19). Further, in FIG. 1, the source pad 21 a, the gate pad 21 b, the OC pad 22, the anode pad 23 a, and the cathode pad 23 b are depicted in rectangular shapes indicated by “S”, “G”, “OC”, “A”, and “K”, respectively (similarly in FIGS. 15 to 19). In FIGS. 15, 16, 18, and 19, only “S”, “G”, and “OC” are depicted.

The current sensing portion 12 operates under conditions similar to those of the main semiconductor element 11 and has a function of detecting overcurrent (OC) flowing in the main semiconductor element 11. The current sensing portion 12 is disposed to be separate from the main semiconductor element 11. The current sensing portion 12 is a vertical MOSFET that includes unit cells having a configuration similar to those of the main semiconductor element 11, of a quantity (total number) (for example, about 10) lower than a quantity (for example, about 10,000) of the unit cells of the main semiconductor element 11, and that has a surface area smaller than a surface area of the main semiconductor element 11.

The unit cells of the current sensing portion 12 are disposed in a region (hereinafter, sensing effective region) 12 a of a portion directly beneath the OC pad 22. The sensing effective region 12 a, for example, has a rectangular planar shape. Unit cells of the current sensing portion 12 are disposed adjacent to one another along a direction parallel to the front surface of the semiconductor substrate 10. The direction along which the unit cells of the current sensing portion 12 are adjacent to one another, for example, is a same direction along which the unit cells of the main semiconductor element 11 are adjacent to one another. The unit cells of the current sensing portion 12 are connected in parallel to one another by the OC pad 22.

A surface area of the sensing effective region 12 a is at most 1/1000 of a surface area of the main effective region 1 a and may be at most 1/10000 thereof. As surface areas of the sensing effective region 12 a and the main effective region 1 a, a total mathematical area of n⁺-type source regions 35 b, 35 a described hereinafter included in the sensing effective region 12 a and the main effective region 1 a may be used. Further, as the surface areas of the sensing effective region 12 a and the main effective region 1 a, a total quantity of unit cells included in the sensing effective region 12 a and the main effective region 1 a may be used.

A reason that a ratio of the surface area of the sensing effective region 12 a to the surface area of the main effective region 1 a is set as described above is as follows. As the surface area of the sensing effective region 12 a increases, conduction loss due to ON resistance of the current sensing portion 12 increases. By setting the ratio of the surface area of the sensing effective region 12 a to the surface area of the main effective region 1 a in the ranges described above, the conduction loss of the current sensing portion 12 may be reduced to an extent of being negligible with respect to the overall conduction loss of the semiconductor device 20 according to the first embodiment.

Further, directly beneath the OC pad 22, a region excluding the sensing effective region 12 a is a sensing non-operating region 12 b that does not function as the current sensing portion 12. In the sensing non-operating region 12 b, no unit cells of the current sensing portion 12 are disposed. In substantially the entire area of the sensing non-operating region 12 b, the p-type low-dose region 63 is provided in a surface region of the front surface of the semiconductor substrate 10. The p-type low-dose region 63 is disposed to be separate from the sensing effective region 12 a and surrounds a periphery of the sensing effective region 12 a in a substantially rectangular shape.

The p-type low-dose region 63, for example, spans substantially the entire area of the main non-operating region 1 b, excluding the sensing effective region 12 a and is further disposed directly beneath the electrode pads other than the source pad 21 a. The p-type low-dose region 63 has a function of making electric field at the front surface of the semiconductor substrate 10 uniform and enhancing breakdown voltage, in a region that excludes the sensing effective region 12 a of the main non-operating region 1 b and in which substantially the entire area the front surface of the semiconductor substrate 10 is covered by an insulating film (field insulating film 70 described hereinafter, refer to FIGS. 2 and 6).

The temperature sensing portion 13 has a function of detecting a temperature of the main semiconductor element 11 by using diode temperature characteristics. The temperature sensing portion 13 is disposed directly beneath the anode pad 23 a and the cathode pad 23 b. The temperature sensing portion 13, for example, may be configured by a polysilicon (poly-Si) layer provided on a field insulating film 70 on the front surface of the semiconductor substrate 10, or may be formed by a pn junction between a p-type region and an n-type region formed in the semiconductor substrate 10.

The over-voltage protecting portion (not depicted), for example, is a diode that protects the main semiconductor element 11 from overvoltage (OV) such as surges. The current sensing portion 12, the temperature sensing portion 13, and the over-voltage protecting portion are controlled by the arithmetic circuit portion. The main semiconductor element 11 is controlled based on output signals from the current sensing portion 12, the temperature sensing portion 13, and the over-voltage protecting portion. The arithmetic circuit portion is configured by plural semiconductor elements such as complementary MOS (CMOS) circuits.

As depicted in FIG. 1, in the main semiconductor element 11, first p⁺-type regions 62 a described hereinafter partially extend toward trenches to be connected to second p⁺-type regions 61 a described hereinafter. Similarly, in the current sensing portion 12 as well, third p⁺-type regions 62 b described hereinafter partially extend toward the trenches to be connected to fourth p⁺-type regions 61 b described hereinafter.

A cross-section of a structure of the active region 1 of the semiconductor device 20 according to the first embodiment will be described. FIG. 2 is a cross-sectional view of the structure along cutting line A-A′ in FIG. 4 depicting a cross-section of the structure of the active region in FIG. 1. FIG. 3 is a cross-sectional view of a portion along cutting line B-B′ in FIG. 4 depicting a cross-section of the structure of the active region in FIG. 1. FIGS. 2 and 3 depict a cross-section (along cutting line X1-X2-X3-X4-X5) of the structure of the main effective region 1 a and the current sensing portion 12. FIGS. 4 and 5 are plan views of a portion along cutting line C-C′ in FIG. 2 depicting a plan view of the structure of the active region in FIG. 1.

FIG. 6 is a cross-sectional view of the structure of the active region in FIG. 1. FIG. 6 depicts a cross-section (along cutting line X1-X2, cutting line X4-X5, and cutting line Y1-Y2) of the structure of the main effective region 1 a, the sensing effective region 12 a, and the temperature sensing portion 13. FIG. 7 is another example of a cross-sectional view of the structure of the active region in FIG. 1.

In FIGS. 2 to 7, while only some of the respective unit cells in the main effective region 1 a and in the sensing effective region 12 a are depicted, the unit cells of the main effective region 1 a and of the sensing effective region 12 a all have a similar configuration (similarly in FIGS. 22 and 23). Further, in FIGS. 2, 3, 6, and 7, while a cross-sectional view of the structure directly beneath the anode pad 23 a and the cathode pad 23 b of the temperature sensing portion 13 is not depicted, a cross-section of the structure directly beneath the anode pad 23 a and the cathode pad 23 b is similar to that directly beneath the gate pad 21 b. In FIG. 6, the sensing non-operating region 12 b between the main effective region 1 a and the sensing effective region 12 a is not depicted.

The main semiconductor element 11 is a vertical MOSFET that includes a MOS gate (insulated gate formed by a 3-layer structure including a metal, an oxide film, and a semiconductor) on the front side of the semiconductor substrate 10, in the main effective region 1 a. Here, while a case in which the main semiconductor element 11 and the circuit portions that protect and control the main semiconductor element 11 have wiring structures of a similar configuration that uses pin-shaped wiring members (terminal pins 48 a to 48 c described hereinafter) is described as an example, instead of the pin-shaped wiring members, each may have a wiring structure that uses wires.

The semiconductor substrate 10 is an epitaxial substrate in which silicon carbide layers 71, 72 that become an n⁻-type drift region (first first-conductivity-type region) 32 and a p-type base region (first second-conductivity-type region) 34 a are sequentially formed by epitaxial growth on an n⁺-type starting substrate (semiconductor substrate) 31 containing silicon carbide. The main semiconductor element 11 has general MOS gates configured by the p-type base region 34 a, the n⁺-type source regions 35 a, p⁺⁺-type contact regions 36 a, trenches (first trenches) 37 a, a gate insulating film 38 a, and gate electrodes 39 a provided at the front side of the semiconductor substrate 10.

The trenches 37 a penetrate through the p-type silicon carbide layer 72 in the depth direction Z from the front surface of the semiconductor substrate 10 (surface of the p-type silicon carbide layer 72) and reach the n⁻-type silicon carbide layer 71. The trenches 37 a, for example, are disposed in a stripe shape extending along a direction parallel to the front surface of the semiconductor substrate 10. FIGS. 2 to 4 depict the trenches 37 a having a stripe shape extending in a first direction X (refer to FIG. 1) along which the electrode pads 21 b, 23 a, 23 b, 22 are arranged. Reference character Y is a direction that is parallel to the front surface of the semiconductor chip and orthogonal to the first direction.

In the trenches 37 a, the gate electrodes 39 a are provided, respectively, via the gate insulating film 38 a. The p-type base region 34 a, the n⁺-type source regions 35 a, and the p⁺⁺-type contact regions 36 a are selectively provided in surface regions of the front surface of the semiconductor substrate 10 between (mesa region) two of the trenches 37 a that are adjacent to one another. The n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a are provided between the front surface of the semiconductor substrate 10 and the p-type base region 34 a.

The n⁺-type source regions 35 a are provided closer to the trenches 37 a than are the p⁺⁺-type contact regions 36 a. The p⁺⁺-type contact regions 36 a may be omitted. When the p⁺⁺-type contact regions 36 a are not provided, at a position further from the trenches 37 a than are the n⁺-type source regions 35 a, the p-type base region 34 a reaches the front surface of the semiconductor substrate 10 and is exposed at the front surface of the semiconductor substrate 10.

In the semiconductor substrate 10, at a position closer to an n⁺-type drain region (the n⁺-type starting substrate 31) than is the p-type base region 34 a, the n⁻-type drift region 32 is provided in contact with the p-type base region 34 a. In contact with these regions, an n-type current spreading region 33 a may be provided between the p-type base region 34 a and the n⁻-type drift region 32. The n-type current spreading region 33 a is a so-called current spreading layer (CSL) that reduces carrier spreading resistance.

Further, in the semiconductor substrate 10, the second p⁺-type regions (second second-conductivity-type high-concentration regions) 61 a and the first p⁺-type regions (first second-conductivity-type high-concentration regions) 62 a are provided at positions closer to the n⁺-type drain region than is the p-type base region 34 a. The second p⁺-type regions 61 a are each disposed to be separate from the p-type base region 34 a and to face, in the depth direction Z, a bottom of a corresponding trench 37 a among the trenches 37 a. The second p⁺-type regions 61 a are partially connected to the first p⁺-type regions 62 a. FIG. 2 depicts a cross-section of a portion where the second p⁺-type regions 61 a are not connected to the first p⁺-type regions 62 a. FIG. 3 depicts a cross-section of a portion where the second p⁺-type regions 61 a are connected to the first p⁺-type regions 62 a.

The first p⁺-type regions 62 a are provided in mesa regions to be separate from the second p⁺-type regions 61 a and the trenches 37 a, and are in contact with the p-type base region 34 a. The first and second p⁺-type regions 62 a, 61 a are fixed at the source electric potential of the main semiconductor element 11, via the p-type base region 34 a. The first and second p⁺-type regions 62 a, 61 a have a function of mitigating electric field applied to the bottoms of the trenches 37 a.

An interlayer insulating film 40 is provided on the entire front surface of the semiconductor substrate 10 and covers the gate electrodes 39 a. All of the gate electrodes 39 a of the main semiconductor element 11 are electrically connected to the gate pad 21 b (refer to FIG. 1) via a gate runner (not depicted), at a portion not depicted. The gate runner is a gate polysilicon layer that is provided on the front surface of the semiconductor substrate in the edge termination region 2 via a field insulating film 70 and that surrounds a periphery of the active region 1 in a substantially rectangular shape.

In first contact holes 40 a that penetrate through the interlayer insulating film 40 in the depth direction Z and reach the semiconductor substrate 10, the n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a of the main semiconductor element 11 are exposed. In the first contact holes 40 a, on the front surface of the semiconductor substrate 10, nickel silicide (NiSi, Ni₂Si, or thermally stable NiSi₂, hereinafter, collectively “NiSi”) films 41 a are provided.

The NiSi films 41 a, in the first contact holes 40 a, are in ohmic contact with the semiconductor substrate 10 and are electrically connected to the n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a. In a case where the p⁺⁺-type contact regions 36 a are not provided, instead of the p⁺⁺-type contact regions 36 a, the p-type base region 34 a is exposed by the first contact holes 40 a and is electrically connected to the NiSi films 41 a.

In the main effective region 1 a, on surfaces of the interlayer insulating film 40 and the NiSi films 41 a overall, a barrier metal 46 a is provided. The barrier metal 46 a has a function of preventing interaction between metal films of the barrier metal 46 a or between regions opposing and sandwiching the barrier metal 46 a. The barrier metal 46 a, for example, may have a stacked structure in which a first titanium nitride (TiN) film 42 a, a first titanium (Ti) film 43 a, a second TiN film 44 a, and a second Ti film 45 a are sequentially stacked.

The first TiN film 42 a is provided only on a surface of the interlayer insulating film 40, covering the surface of the interlayer insulating film 40 overall. The first Ti film 43 a is provided on surfaces of the first TiN film 42 a and the NiSi films 41 a. The second TiN film 44 a is provided on a surface of the first Ti film 43 a. The second Ti film 45 a is provided on a surface of the second TiN film 44 a. The barrier metal 46 a, for example, is not provided in the temperature sensing portion 13.

The source pad (first source pad) 21 a is embedded in the first contact holes 40 a and provided on the entire surface of the second Ti film 45 a. The source pad 21 a is electrically connected to the n⁺-type source regions 35 a and the p-type base region 34 a via the barrier metal 46 a and the NiSi films 41 a and functions as a source electrode of the main semiconductor element 11. The source pad 21 a, for example, is an aluminum (Al) film or an aluminum alloy film having a thickness of about 5 μm.

In particular, when the source pad 21 a is an aluminum alloy film, the source pad 21 a, for example, may be an aluminum-silicon (Al—Si) film that contains at most about 5% in total, may be an aluminum-silicon-copper (Al—Si—Cu) film that contains at most about 5% silicon and at most about 5% copper (Cu) in total, or may be an aluminum-copper (Al—Cu) film that contains at most about 5% copper in total.

First ends of the terminal pins 48 a are bonded on the source pad 21 a, via plating films 47 a and solder layers (not depicted). Second ends of the terminal pins 48 a are bonded to a metal bar (not depicted) disposed so as to oppose the front surface of the semiconductor substrate 10. Further, the second ends of the terminal pins 48 a are exposed outside a case (not depicted) in which the semiconductor substrate 10 is mounted and are electrically connected to an external device (not depicted). The terminal pins 48 a are wiring members having a round bar-like (cylindrical) shape of a predetermined diameter.

The terminal pins 48 a are soldered to the plating films 47 a in a substantially upright state with respect to the front surface of the semiconductor substrate 10. The terminal pins 48 a are external connection terminals that lead out electric potential of the source pad 21 a to an external destination and are connected to an external ground potential (minimum electric potential). A portion of the surface of the source pad 21 a other than portions having the plating films 47 a is covered by a first protective film 49 a, and borders between the plating films 47 a and the first protective film 49 a are covered by second protective films 50 a. The first and the second protective films 49 a, 50 a, for example, are polyimide films.

A drain electrode 51 is in ohmic contact with an entire back surface (back surface of the n⁺-type starting substrate 31) of the semiconductor substrate 10. On the drain electrode 51, for example, a drain pad (electrode pad: not depicted) is provided having a stacked structure in which a Ti film, a nickel (Ni) film, and a gold (Au) film are sequentially stacked. The drain pad is soldered to a metal base plate (not depicted) and at least a portion of the drain pad is in contact with a base part of a cooling fin (not depicted) via the metal base plate.

In this manner, the terminal pins 48 a are bonded to the front surface of the semiconductor substrate 10 and the back surface is bonded to the metal base plate, whereby the semiconductor device 20 according to the first embodiment has a double-sided cooling structure in which a cooling structure is provided on both sides of the semiconductor substrate 10. In other words, heat generated by the semiconductor substrate 10 is radiated from a fin portion of the cooling fin in contact with the back surface of the semiconductor substrate 10 via the metal base plate and is radiated from the metal bar to which the terminal pins 48 a of the front surface of the semiconductor substrate 10 are bonded.

The current sensing portion 12 includes the p-type base region (second second-conductivity-type region) 34 b, the n⁺-type source regions 35 b, p⁺⁺-type contact regions 36 b, trenches (second trenches) 37 b, a gate insulating film 38 b, gate electrodes 39 b, and the interlayer insulating film 40 respectively having configurations similar to configurations of corresponding parts of the main semiconductor element 11. Parts of the MOS gates of the current sensing portion 12 are provided in the sensing effective region 12 a of the main non-operating region 1 b. The p-type base region 34 b of the current sensing portion 12 is configured by the p-type silicon carbide layer 72 similarly to the p-type base region 34 a of the main semiconductor element 11.

In the current sensing portion 12 as well, similarly to the main semiconductor element 11, the p⁺⁺-type contact regions 36 b may be omitted. The current sensing portion 12, similarly to the main semiconductor element 11, may have the n-type current spreading region 33 b. Further, the current sensing portion 12, similarly to the main semiconductor element 11, has the fourth p⁺-type regions (fourth second-conductivity-type high-concentration regions) 61 b and the third p⁺-type regions (third second-conductivity-type high-concentration regions) 62 b; and the fourth p⁺-type regions 61 b are partially connected to the third p⁺-type regions 62 b. The gate electrodes 39 b of the current sensing portion 12 are electrically connected to the gate pad 21 b (refer to FIG. 1), via a gate runner (not depicted). The gate electrodes 39 b of the current sensing portion 12 are covered by the interlayer insulating film 40.

In the sensing effective region 12 a, second contact holes 40 b that penetrate through the interlayer insulating film 40 in the depth direction Z and reach the semiconductor substrate 10 are provided. In the second contact holes 40 b, the n⁺-type source regions 35 b and the p⁺⁺-type contact regions 36 b of the current sensing portion 12 are exposed. In the second contact holes 40 b, similarly to the main semiconductor element 11, NiSi films 41 b that are electrically connected to the n⁺-type source regions 35 b and the p⁺⁺-type contact regions 36 b are provided.

In a case where the p⁺⁺-type contact regions 36 b are not provided, instead of the p⁺⁺-type contact regions 36 b, the p-type base region 34 b is exposed by the second contact holes 40 b and is electrically connected to the NiSi films 41 b. In the sensing effective region 12 a, similarly to the main semiconductor element 11, a barrier metal 46 b is provided on an entire surface of the interlayer insulating film 40 and entire surfaces of the NiSi films 41 b. Reference characters 42 b to 45 b are a first TiN film, a first Ti film, a second TiN film, and a second Ti film configuring the barrier metal 46 b.

The OC pad 22 is provided on the entire surface of the barrier metal 46 b so as to be embedded in the second contact holes 40 b. The OC pad 22 is electrically connected to the n⁺-type source regions 35 b and the p-type base region 34 b of the current sensing portion 12, via the barrier metal 46 b and the NiSi films 41 b. The OC pad 22 functions as a source electrode of the current sensing portion 12. The OC pad 22, for example, is formed by a material similar to that of the source pad 21 a.

In the sensing non-operating region 12 b of the main non-operating region 1 b, in a surface region of the front surface of the semiconductor substrate 10, as described above, the p-type low-dose region 63 is provided. The p-type low-dose region 63 is configured by a p-type region 64 provided in a surface region of the semiconductor substrate 10 in the sensing non-operating region 12 b. In FIGS. 2, 6, and 7, the p-type low-dose region 63 configured by the p-type region 64 that reaches a position closer to the n⁺-type drain region than is the n-type current spreading region 33 a of the main semiconductor element 11, from the front surface of the semiconductor substrate 10, is depicted. In a region of the main non-operating region 1 b excluding the sensing effective region 12 a and in the edge termination region 2, the field insulating film 70 is provided having a uniform thickness on the entire front surface of the semiconductor substrate 10.

In the sensing non-operating region 12 b, the barrier metal 46 b and the OC pad 22 extend on the field insulating film 70, from the sensing effective region 12 a. In the sensing non-operating region 12 b, the terminal pins 48 b are bonded on the OC pad 22 by a wiring structure similar to a wiring structure on the source pad 21 a. The terminal pins 48 b on the OC pad 22 are wiring members having a round bar-like (cylindrical) shape of a diameter smaller than that of the terminal pins 48 a on the source pad 21 a.

The terminal pins 48 b, for example, are external connection terminals that lead out electric potential of the OC pad 22 and connect the OC pad 22 to a ground potential via an external resistor 15 (refer to FIG. 8). Disposal of the terminal pins 48 b in the sensing non-operating region 12 b enables pressure generated during bonding of the terminal pins 48 b to be prevented from being applied to unit cells of the current sensing portion 12. Reference characters 47 b, 49 b, 50 b are a plating film and first and second protective films that configure the wiring structure on the OC pad 22.

The field insulating film 70 and an n-type cathode region and a p-type anode region of the temperature sensing portion 13 are covered by the interlayer insulating film 40. The anode pad 23 a and the cathode pad 23 b are in contact with the p-type anode region and the n-type cathode region of the temperature sensing portion 13, respectively, in third and fourth contact holes (not depicted) of the interlayer insulating film 40. A material of the anode pad 23 a and the cathode pad 23 b, for example, is similar to that of the source pad 21 a.

On the anode pad 23 a and on the cathode pad 23 b, terminal pins (not depicted) are bonded on each by wiring structures similar to the wiring structure on the source pad 21 a. These terminal pins are external connection terminals that respectively lead electric potential of the anode pad 23 a and the cathode pad 23 b to an external destination, and are wiring members having a round bar-like shape of a predetermined diameter. Directly beneath the temperature sensing portion 13, the p-type low-dose region 63 described above extends in a surface region of the front surface of the semiconductor substrate 10.

The gate pad 21 b is provided on the field insulating film 70. Between the gate pad 21 b and the field insulating film 70, a barrier metal 46 c having a stacked structure similar to that of the barrier metal 46 a may be provided. Reference characters 42 c to 45 c are respectively a first TiN film, a first Ti film, a second TiN film, and a second Ti film that configure the barrier metal 46 c. A material of the gate pad 21 b, for example, may be similar to that of the source pad 21 a.

On the gate pad 21 b as well, for example, the terminal pins 48 c are bonded by a wiring structure similar to the wiring structure on the source pad 21 a. The terminal pins 48 c are external connection terminals that lead electric potential of the gate pad 21 b to an external destination and are wiring members having a round bar-like shape of a predetermined diameter. Reference characters 47 c, 49 c, 50 c are a plating film and first and second protective films that configure the wiring structure on the gate pad 21 b.

Directly beneath a gate pad portion 14 as well, similarly to directly beneath the temperature sensing portion 13, the p-type low-dose region 63 extends in a surface region of the front surface of the semiconductor substrate 10. The p-type low-dose region 63 may be connected to the p-type base region 34 a of the main semiconductor element 11 by a region of the main non-operating region 1 b excluding the sensing effective region 12 a. Between the p-type low-dose region 63 and the front surface of the semiconductor substrate 10, the p⁺⁺-type contact region 36 c may be provided.

As described above, the main semiconductor element 11 has the first and the second p⁺-type regions 62 a, 61 a; and the current sensing portion 12 has the third and the fourth p⁺-type regions 62 b, 61 b in the sensing effective region 12 a. In the main semiconductor element 11, as depicted in FIGS. 4 and 5, the second p⁺-type regions 61 a are connected to the first p⁺-type regions 62 a via first connecting regions 90 a that are portions of the first p⁺-type regions 62 a extending toward the trenches 37 a. Similarly, in the sensing effective region 12 a of the current sensing portion 12, as depicted in FIGS. 4 and 5, the fourth p⁺-type regions 61 b are connected to the third p⁺-type regions 62 b via second connecting regions 90 b that are portions of the third p⁺-type regions 62 b extending toward the trenches 37 b.

In the first embodiment, with a design size different from that of the main semiconductor element 11, the current sensing portion 12 is configured and a ratio (hereinafter, ratio of the area of the first connecting regions 90 a) of a mathematical area of the first connecting regions 90 a to a mathematical area of the second p⁺-type regions 61 a is greater than a ratio (hereinafter, ratio of the area of the second connecting regions 90 b) of a mathematical area of the second connecting regions 90 b to a mathematical area of the fourth p⁺-type regions 61 b, i.e., the mathematical area of the first connecting regions 90 a/the mathematical area of the second p⁺-type regions 61 a>the mathematical area of the second connecting regions 90 b/the mathematical area of the fourth p⁺-type regions 61 b. As depicted in FIGS. 4 and 5, while the mathematical area of the second p⁺-type regions 61 a and the mathematical area of the fourth p⁺-type regions 61 b are equal in size, the mathematical area of the first connecting regions 90 a is greater than the mathematical area of the second connecting regions 90 b. Further, the ratio of the area of the first connecting regions 90 a may be at least two times the ratio of the area of the second connecting regions 90 b.

In FIG. 4, a length (first length) Wa of each of the first connecting regions 90 a is set to be greater than a length (second length) Wb of each of the second connecting regions 90 b (Wa>Wb), whereby the ratio of the area of the first connecting regions 90 a is set to be greater than the ratio of the area of the second connecting regions 90 b. Further, the length Wa of each of the first connecting regions 90 a may be set to be at least two times the length Wb of each of the second connecting regions 90 b (Wa>2×Wb). Here, the length Wa of each of the first connecting regions 90 a is a length of one of the first connecting regions 90 a in a direction (X direction in FIGS. 2 and 3) along which each of the trenches 37 a extend in a stripe shape and similarly regarding the length Wb of each of the second connecting regions 90 b.

In FIG. 5, a quantity of the first connecting regions 90 a is set to be greater than a quantity of the second connecting regions 90 b, whereby the ratio of the area of the first connecting regions 90 a is set to be greater than the ratio of the area of the second connecting regions 90 b. Further, the quantity of the first connecting regions 90 a may be at least two times the quantity of the second connecting regions 90 b. When the quantity of the second connecting regions 90 b is set to be 0, the fourth p⁺-type regions 61 b and the third p⁺-type regions 62 b are not at the same electric potential and therefore, at least one or more of the second connecting regions 90 b has to be provided.

Further, when the length Wa of each of the first connecting regions 90 a is set to be greater than the length Wb of each of the second connecting regions 90 b (Wa>Wb), and in combination with the quantity of the first connecting regions 90 a being greater than the quantity of the second connecting regions 90 b, the ratio of the area of the first connecting regions 90 a may be set to be greater than the ratio of the area of the second connecting regions 90 b. In this case as well, the length Wa of each of the first connecting regions 90 a, the length Wb of each of the second connecting regions 90 b, the quantity of the first connecting regions 90 a, or the quantity of the second connecting regions 90 b may be adjusted to set the ratio of the area of the first connecting regions 90 a to be at least two times the ratio of the area of the second connecting regions 90 b.

Operation of the semiconductor device 20 according to the first embodiment will be described. FIG. 8 is a circuit diagram depicting an equivalent circuit of the semiconductor device according to the first embodiment. As depicted in FIG. 8, the current sensing portion 12 is connected in parallel to plural MOSFET unit cells configuring the main semiconductor element 11. A ratio (hereinafter, current sensing ratio) of a sensing current flowing in the current sensing portion 12 and the main current flowing in the main semiconductor element 11 is preset.

The current sensing ratio, for example, may be set by changing the quantity of unit cells in the main semiconductor element 11 and in the current sensing portion 12. A sensing current that is smaller than the main current that flows in the main semiconductor element 11 flows in the current sensing portion 12, corresponding to the current sensing ratio. A source of the main semiconductor element 11 is connected to a grounding point GND of the ground potential. The resistor 15, which is an external component, is connected between the grounding point GND and a source of the current sensing portion 12.

In a state where voltage that is positive with respect to the source electrode of the main semiconductor element 11 (the source pad 21 a) is applied to the drain electrode 51, when voltage that is at least equal to a threshold voltage is applied to the gate electrodes 39 a of the main semiconductor element 11, an n-type inverse layer (channel) is formed in a portion of the p-type base region 34 a of the main semiconductor element 11 sandwiched between the n⁺-type source regions 35 a and the n-type current spreading region 33 a. As a result, the main current flows from the drain of the main semiconductor element 11 toward the source thereof and the main semiconductor element 11 turns ON.

Here, in a state in which voltage that is positive with respect to the source electrode (the OC pad 22) of the current sensing portion 12 is applied to the drain electrode 51 under conditions similar to those of the main semiconductor element 11, when voltage at least equal to the threshold voltage is applied to the gate electrodes 39 b of the current sensing portion 12, an n-type inverse layer is formed in a portion of the p-type base region 34 b of the sensing effective region 12 a, the portion sandwiched between the n⁺-type source regions 35 b and the n-type current spreading region 33 b. As a result, sensing current from the drain of the current sensing portion 12 toward the source thereof flows and the current sensing portion 12 turns ON.

The sensing current passes through the resistor 15 connected to the source of the current sensing portion 12 and flows to the grounding point GND. As a result, a voltage decrease occurs at the resistor 15. When overcurrent is applied to the main semiconductor element 11, the sensing current of the current sensing portion 12 increases according to the magnitude of the overcurrent to the main semiconductor element 11 and the voltage decrease at the resistor 15 also increases. The magnitude of the voltage decrease at the resistor 15 is monitored, thereby enabling detection of the overcurrent in the main semiconductor element 11.

On the other hand, when voltage less than the threshold voltage is applied to the gate electrodes 39 a of the main semiconductor element 11, pn junctions between the first and the second p⁺-type regions 62 a, 61 a, the n-type current spreading region 33 a, and the n⁻-type drift region 32 of the main semiconductor element 11 are reverse biased. The voltage that is less than the threshold voltage is further applied to the gate electrodes 39 b of the current sensing portion 12; and pn junctions between the third and the fourth p⁺-type regions 62 b, 61 b, the n-type current spreading region 33 b, and the n⁻-type drift region 32 of the current sensing portion 12 are also reverse biased. As a result, the main current of the main semiconductor element 11 and the sensing current of the current sensing portion 12 are blocked; and the main semiconductor element 11 and the current sensing portion 12 maintain the OFF state.

When the main semiconductor element 11 is OFF and voltage that is negative with respect to the source electrode of the main semiconductor element 11 is applied to the drain electrode 51, in the main effective region 1 a of the active region 1, a parasitic diode 16 a formed by pn junctions between the p-type base region 34 a, the first and second p⁺-type regions 62 a, 61 a, the n-type current spreading region 33 a, and the n⁻-type drift region 32 is energized. In a region of the main non-operating region 1 b excluding the sensing effective region 12 a, the parasitic diode 16 b (refer to FIGS. 2 and 5) formed by the pn junction between the p-type low-dose region 63 and the n⁻-type drift region 32 is energized. The parasitic diodes 16 a, 16 b are the parasitic diode 16 of the main semiconductor element 11.

In the edge termination region 2, a parasitic diode formed by a pn junction between the p-type region for element separation and the n⁻-type drift region 32 is also energized. Further, when the current sensing portion 12 is OFF and voltage that is negative with respect to the source electrode of the current sensing portion 12 is applied to the drain electrode 51, in the sensing effective region 12 a of the main non-operating region 1 b of the active region 1, the parasitic diode 17 formed by the pn junctions between the p-type base region 34 b, the third and the fourth p⁺-type regions 62 b, 61 b, the n-type current spreading region 33 b, and the n⁻-type drift region 32 is energized.

As described above, the ratio of the area of the first connecting regions 90 a of the main semiconductor element 11 is set to be greater than the ratio of the area of the second connecting regions 90 b of the current sensing portion 12. As a result, in the current sensing portion 12, the p-type regions per unit area are set to be fewer than those in the main semiconductor element 11, thereby enabling the amount of positive hole current (reverse recovery current of the parasitic diode 16 b of the current sensing portion 12) generated in the n⁻-type drift region 32 of the current sensing portion 12 to be reduced and the forward voltage of the parasitic diode 16 b to be increased. With such a configuration, excess current when the parasitic diode 16 b turns OFF does not flow into the current sensing portion 12, the ESD capability of the current sensing portion 12 increases, and the reverse recovery resistance may be improved.

A method of manufacturing the semiconductor device 20 according to the first embodiment will be described. FIGS. 9, 10, 11, 12, 13, and 14 are cross-sectional views of the semiconductor device according to the first embodiment during manufacture. In FIGS. 9 to 14, while only the main semiconductor element 11 is depicted, each part of all elements fabricated (manufactured) on the semiconductor substrate 10 having the main semiconductor element 11, for example, are formed concurrently with each part of the main semiconductor element 11. Formation of each part of the current sensing portion 12, the temperature sensing portion 13, and the gate pad portion 14 will be described with reference to FIGS. 1 to 7.

First, as depicted in FIG. 9, the n⁺-type starting substrate (semiconductor wafer) 31 containing silicon carbide is prepared. The n⁺-type starting substrate 31, for example, may be a silicon carbide single crystal substrate doped with nitrogen (N). Next, on a front surface of the n⁺-type starting substrate 31, the n-type silicon carbide layer 71 doped with a lower concentration of nitrogen than is the n⁺-type starting substrate 31 is formed by epitaxial growth. When the main semiconductor element 11 has a breakdown voltage of 3300V, a thickness t11 of the n-type silicon carbide layer 71, for example, may be about 30 μm.

Next, as depicted in FIG. 10, by photolithography and, for example, ion implantation of a p-type impurity such as Al, the second p⁺-type regions 61 a and p⁺-type regions 81 are selectively formed in surface regions of the n⁻-type silicon carbide layer 71 in the main effective region 1 a. The p⁺-type regions 81 are a part of the first p⁺-type regions 62 a. The second p⁺-type regions 61 a and the p⁺-type regions 81, for example, are disposed to repeatedly alternate one another along the first direction X depicted in FIG. 1.

A distance d2 between one of the second p⁺-type regions 61 a and one of the p⁺-type regions 81 adjacent to one another, for example, may be about 1.5 μm. A depth d1 and an impurity concentration of the second p⁺-type regions 61 a and the p⁺-type regions 81, for example, may be about 0.5 μm and about 5.0×10¹⁸/cm³, respectively. Subsequently, an ion implantation mask (not depicted) used in forming the second p⁺-type regions 61 a and the p⁺-type regions 81 is removed.

Next, by photolithography and, for example, ion implantation of an n-type impurity such as nitrogen, n-type regions 82 are formed in surface regions of the n⁻-type silicon carbide layer 71, spanning the main effective region 1 a overall. The n-type regions 82, for example, are formed between the second p⁺-type regions 61 a and the p⁺-type regions 81, to be in contact with these regions. A depth d3 and an impurity concentration of the n-type regions 82, for example, may be about 0.4 μm and about 1.0×10¹⁷/cm³, respectively.

The n-type regions 82 are a part of the n-type current spreading region 33 a.

A portion of the n-type silicon carbide layer 71 sandwiched between the n-type regions 82, the second p⁺-type regions 61 a, the p⁺-type regions 81, and the n⁺-type starting substrate 31 is the n⁻-type drift region 32. Next, an ion implantation mask (not depicted) used in forming the n-type regions 82 is removed. A sequence in which the n-type regions 82, the second p⁺-type regions 61 a, and the p⁺-type regions 81 are formed may be interchanged.

Next, as depicted in FIG. 11, on the n⁻-type silicon carbide layer 71, for example, an n⁻-type silicon carbide layer doped with an n-type impurity such as nitrogen is further formed, for example, to have a thickness t12 of 0.5 μm, thereby increasing the thickness of the n-type silicon carbide layer 71.

Next, by photolithography and ion implantation of a p-type impurity such as Al, in a portion 71 a increasing the thickness of the n-type silicon carbide layer 71, p⁺-type regions 83 are selectively provided to a depth reaching the p⁺-type regions 81. The p⁺-type regions 81, 83 that are adjacent to one another in the depth direction Z are connected and form the first p⁺-type regions 62 a. A length and an impurity concentration of the p⁺-type regions 83, for example, are substantially equal to those of the p⁺-type regions 81. Next, an ion implantation mask used in forming the p⁺-type regions 83 (not depicted) is removed.

Next, by photolithography and, for example, ion implantation of an n-type impurity such as nitrogen, in the portion 71 a increasing the thickness of the n⁻-type silicon carbide layer 71, n-type regions 84 are selectively formed to a depth reaching the n-type regions 82. An impurity concentration of the n-type regions 84, for example, is substantially equal to that of the n-type regions 82. The n-type regions 82, 84 that are adjacent to one another in the depth direction Z are connected, whereby the n-type current spreading region 33 a is formed. A sequence in which the p⁺-type regions 83 and the n-type regions 84 are formed may be interchanged. Next, an ion implantation mask (not depicted) used in forming the n-type regions 84 is removed.

Next, as depicted in FIG. 12, on the n-type silicon carbide layer 71, for example, the p-type silicon carbide layer 72 doped with a p-type impurity such as Al is formed by epitaxial growth. A thickness t13 and an impurity concentration of the p-type silicon carbide layer 72, for example, may be about 1.3 μm and about 4.0×10¹⁷/cm³, respectively. As a result, the semiconductor substrate (semiconductor wafer) 10 in which the n-type silicon carbide layer 71 and the p-type silicon carbide layer 72 are sequentially stacked on the n⁺-type starting substrate 31 by epitaxial growth is formed.

Next, a process including photolithography, ion implantation, and removal of the ion implantation mask as one set is repeatedly performed under different conditions, thereby selectively forming in the p-type silicon carbide layer 72, the n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a in the main effective region 1 a.

A sequence in which the n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a are formed may be interchanged. In the main effective region 1 a, a portion sandwiched by the n⁺-type source regions 35 a, the p⁺⁺-type contact regions 36 a, and the n-type silicon carbide layer 71 is the p-type base region 34 a. In the ion implantations described above, for example, a resist film or an oxide film may be used as an ion implantation mask.

Next, with respect to diffusion regions (the first and the second p⁺-type regions 62 a, 61 a, the n-type current spreading region 33 a, the n⁺-type source regions 35 a, and the p⁺⁺-type contact regions 36 a) formed by ion implantation, for example, a heat treatment (activation annealing) for impurity activation is performed at a temperature of about 1700 degrees C. for about 2 minutes. The activation annealing may be performed once for all of the diffusion regions collectively after formation or may be performed each ion implantation for forming the diffusion regions.

Next, as depicted in FIG. 13, by photolithography and, for example, dry etching, the trenches 37 a that penetrate through the n⁺-type source regions 35 a and the p-type base region 34 a are formed. The trenches 37 a, for example, have a depth reaching the second p⁺-type regions 61 a in the n-type current spreading region 33 a. As an etching mask for forming the trenches 37 a, for example, a resist mask or an oxide mask may be used. Subsequently, the etching mask is removed.

Next, as depicted in FIG. 14, the gate insulating film 38 a is formed along the surface of the semiconductor substrate 10 and inner walls of the trenches 37 a. The gate insulating film 38 a, for example, may be a thermal oxide film formed by a temperature of about 1000 degrees C. in an oxygen (O₂) atmosphere, or a deposited film of a high temperature oxide (HTO). Next, in the trenches 37 a, on the gate insulating film 38 a, for example, a polysilicon layer doped with phosphorus is formed as the gate electrodes 39 a.

All elements (for example, the current sensing portion 12, for example, a diffusion diode forming the temperature sensing portion 13 and the over-voltage protecting portion, a complementary MOS (CMOS) configuring the arithmetic circuit portion) other than the main semiconductor element 11, suffice to be formed in the main non-operating region 1 b of the semiconductor substrate 10, concurrently with the corresponding parts of the main semiconductor element 11 when the parts of the main semiconductor element 11 described above are formed.

For example, diffusion regions of elements disposed on the semiconductor substrate 10 suffice to be formed concurrently with diffusion regions having the same conductivity type, impurity concentration and diffusion depth among the diffusion regions configuring the main semiconductor element 11. Further, gate trenches, gate insulating films, and gate electrodes of elements disposed on the semiconductor substrate 10 suffice to be formed concurrently with the trenches 37 a, the gate insulating film 38 a, and the gate electrodes 39 a of the main semiconductor element 11, respectively.

The p-type low-dose region 63 may be configured by at least one of the p-type base region 34 a of the main semiconductor element 11 and the first and second p⁺-type regions 62 a, 61 a. Further, when the p-type low-dose region 63 is formed concurrently with the p-type base region 34 a and/or the first and second p⁺-type regions 62 a, 61 a by multistage (multiple sessions of) ion implantation, the number of stages (sessions) of the ion implantation to a formation region of the p-type low-dose region 63 may be reduced to control the total dose amount of the p-type low-dose region 63.

Further, the p-type low-dose region 63 may be formed by a new ion implantation different from the ion implantation for forming the p-type base region 34 a of the main semiconductor element 11 and the first and second p⁺-type regions 62 a, 61 a. Moreover, in the main non-operating region 1 b, in surface regions of the front surface of the semiconductor substrate 10, an n⁻-type region 32 b is formed and the p-type low-dose region 63 and the sensing effective region 12 a are separated from one another by the n⁻-type region 32 b.

Next, on the front surface of the semiconductor substrate 10, the field insulating film 70 is formed. The field insulating film 70 may be formed before the gate insulating film 38 a. Next, by a general method, the gate runner (not depicted) is formed on the field insulating film 70. When the temperature sensing portion 13 is a polysilicon diode, for example, formation thereof on the field insulating film 70 may concurrent with the gate runner.

Next, on the front surface of the semiconductor substrate 10 overall, the interlayer insulating film 40 is formed. The interlayer insulating film 40, for example, may be a phosphosilicate glass (PSG). A thickness of the interlayer insulating film 40, for example, may be about 1 μm. Next, by photolithography and etching, the interlayer insulating film 40 and the gate insulating films 38 a, 38 b are selectively removed, forming the first and the second contact holes 40 a, 40 b.

Here, the first contact holes 40 a exposing the n⁺-type source regions 35 a and the p⁺⁺-type contact regions 36 a of the main semiconductor element 11 are formed. The second contact holes 40 b exposing the n⁺-type source regions 35 b and the p⁺⁺-type contact regions 36 b of the current sensing portion 12 are formed in the sensing effective region 12 a. Next, by a heat treatment, the interlayer insulating film 40 is planarized (reflow).

Next, for example, by sputtering, the first TiN films 42 a, 42 b are formed on the front surface of the semiconductor substrate 10 overall. The first TiN films 42 a, 42 b cover the entire surfaces of the interlayer insulating film 40 and portions (the n⁺-type source regions 35 a, 35 b and the p⁺⁺-type contact regions 36 a, 36 b) of the front surface of the semiconductor substrate 10 exposed by the first and the second contact holes 40 a, 40 b.

Next, by photolithography and etching, portions of the first TiN films 42 a, 42 b covering the semiconductor substrate 10 in the first and the second contact holes 40 a, 40 b are removed, again exposing the n⁺-type source regions 35 a, 35 b and the p⁺⁺-type contact regions 36 a, 36 b. As a result, the first TiN films 42 a, 42 b are left as the barrier metals 46 a, 46 b on the entire surface of the interlayer insulating film 40.

Next, for example, by sputtering, on semiconductor portions (the front surface of the semiconductor substrate 10) exposed by the first and the second contact holes 40 a, 40 b, a Ni film (not depicted) is formed. Here, the Ni film is further formed on the first TiN films 42 a, 42 b. Next, for example, by a heat treatment of about 970 degrees C., a silicide is formed where the Ni film is in contact with the semiconductor portions, thereby forming the NiSi films 41 a, 41 b that are in ohmic contact with the semiconductor portions.

During the heat treatment for converting this nickel into a silicide, the first TiN films 42 a, 42 b are disposed between the interlayer insulating film 40 and the Ni film, whereby diffusion of nickel atoms in the nickel film into the interlayer insulating film 40 may be prevented. A portion of the Ni film on the interlayer insulating film 40 is not in contact with a semiconductor portion and therefore, is not converted into a silicide. Thereafter, the portion of the Ni film on the interlayer insulating film 40 is removed, exposing the interlayer insulating film 40.

Next, on the back surface of the semiconductor substrate 10, for example, a Ni film is formed. Next, for example, by a heat treatment of about 970 degrees C., the Ni film is converted into a silicide, thereby forming as the drain electrode 51, a NiSi film in ohmic contact with a semiconductor portion (back surface of the semiconductor substrate 10). The heat treatment for silicide conversion when the NiSi film that becomes the drain electrode 51 is formed may be performed concurrently with the heat treatment for forming the NiSi films 41 a, 41 b of the front surface of the semiconductor substrate 10.

Next, by sputtering, on the front surface of the semiconductor substrate 10, the first Ti films 43 a, 43 b, the second TiN films 44 a, 44 b, and the second Ti films 45 a, 45 b forming the barrier metals 46 a, 46 b; and an Al film (or an aluminum alloy film) forming the source pad 21 a, the gate pad 21 b, and the OC pad 22 are sequentially stacked. A thickness of the Al film, for example, is at most about 5 μm.

Next, by photolithography and etching, a metal film deposited on the front surface of the semiconductor substrate 10 is patterned, leaving portions becoming the barrier metals 46 a, 46 b, the source pad 21 a, the gate pad 21 b, the OC pad 22, the OV pad (not depicted) of the over-voltage protecting portion, and the electrode pad (not depicted) of the arithmetic circuit portion.

The anode pad 23 a and the cathode pad 23 b of the temperature sensing portion 13 may be formed concurrently with the source pad 21 a, or may be formed at a timing different from that of the source pad 21 a. Next, for example, by sputtering, on a surface of the drain electrode 51, for example, a Ti film, an Ni film, and a gold (Au) film are sequentially stacked, thereby forming the drain pad (not depicted).

Next, for example, the front surface of the semiconductor substrate 10 is protected by a polyimide film by a chemical vapor deposition (CVD) method. Next, by photolithography and etching, the polyimide film is selectively removed, thereby forming and opening the first protective films 49 a to 49 c that cover electrode pads respectively.

Next, after a general plating pretreatment, the plating films 47 a to 47 c are formed by a general plating process in portions of the electrode pads 21 a, 21 b, 22, 23 a, 23 b exposed in the openings of the first protective films 49 a to 49 c. Here, the first protective films 49 a to 49 c function as masks that suppress wet spreading of the plating films 47 a to 47 c. A thickness of the plating films 47 a to 47 c, for example, may be about 5 μm.

Next, for example, by a CVD method, a polyimide film becoming the second protective films 50 a to 50 c that cover each of the borders between the plating films 47 a to 47 c and the first protective films 49 a to 49 c is formed. Next, the terminal pins 48 a to 48 c are bonded on the plating films 47 a to 47 c by respective solder layers (not depicted). Here, the second protective films 50 a to 50 c function as masks that suppress wet spreading of the solder layers.

Thereafter, the semiconductor substrate 10 is diced (cut) into individual chips, whereby the semiconductor device 20 depicted in FIGS. 1 to 7 is completed.

As described above, according to the first embodiment, the ratio of the area of the first connecting regions is set to be greater than the ratio of the area of the second connecting regions. As a result, in the current sensing portion, the p-type regions per unit area are set to be lower than those in the main semiconductor element, enabling the amount of the positive hole current (reverse recovery current of the parasitic diode of the current sensing portion) generated in the n⁻-type drift region of the current sensing portion to be reduced and the forward voltage of the parasitic diode to be increased. With such a configuration, excess current when the parasitic diode turns OFF does not flow into the current sensing portion, the ESD capability of the current sensing portion increases, and the reverse recovery resistance may be improved.

A semiconductor device according to a second embodiment will be described. FIG. 15 is a plan view of a layout when the semiconductor device according to the second embodiment is viewed from the front side of the semiconductor substrate. A semiconductor device 91 according to the second embodiment differs from the semiconductor device 20 according to the first embodiment (refer to FIGS. 1 to 7) in that in the active region 1 of the single semiconductor substrate 10, the main semiconductor element 11 and the current sensing portion 12 alone are provided.

In other words, in the second embodiment, in the main non-operating region 1 b, only the gate pad 21 b and the OC pad 22 are disposed. Therefore, on the semiconductor substrate 10 having the main semiconductor element 11, the surface area of the main non-operating region 1 b is smaller as compared to a case in which the current sensing portion 12 and a high-function portion other than the current sensing portion 12 are disposed as circuit portions for protecting/controlling the main semiconductor element 11.

The extent to which the surface area of the main non-operating region 1 b is reduced, the surface area of the main effective region 1 a increases, thereby enabling current capability of the semiconductor device 91 according to the second embodiment to be enhanced. In the second embodiment, for example, the main effective region 1 a may have a substantially rectangular planar shape in which a portion is recessed inward. The main non-operating region 1 b may be disposed at the recessed portion of the main effective region 1 a and may have a substantially rectangular planar shape surrounded on three sides by the main effective region 1 a.

In the second embodiment, a cross-sectional view of the structure (cross-sectional views of the structure along cutting line X1-X2-X3-X4-X5) of the main effective region 1 a and the current sensing portion 12 is similar to that of the first embodiment (refer to FIG. 2, 3, or 7). A cross-sectional view of the structure (cross-sectional view of the structure along cutting line X1-X2, cutting line X4-X5, and cutting line Y1-Y2) of the main effective region 1 a, the sensing effective region 12 a, and the temperature sensing portion 13 is similar to that of the first embodiment (refer to FIG. 6).

As described above, according to the second embodiment, even when only the main semiconductor element and the current sensing portion are provided in the active region of a single semiconductor substrate, effects similar to those of the first embodiment may be obtained.

A semiconductor device according to a third embodiment will be described. FIG. 16 is a plan view of a layout when the semiconductor device according to the third embodiment is viewed from the front side of the semiconductor substrate. A semiconductor device 92 according to the third embodiment differs from the semiconductor device 91 according to the second embodiment (refer to FIG. 15) in that only directly beneath the gate pad 21 b and the OC pad 22, p-type low-dose regions 63′ are respectively provided to be separate from each.

The p-type low-dose regions 63′ each have a surface area that is greater than that of a corresponding electrode pad (the gate pad 21 b and the OC pad 22) facing thereto in the depth direction Z and the p-type low-dose regions 63′ each face the entire surface of the corresponding electrode pad in the depth direction Z. The p-type low-dose regions 63′, similarly to the first embodiment, are each fixed at the source electric potential of the main semiconductor element 11 and connected to the p-type base region 34 a of the main semiconductor element 11, between the main effective region 1 a and the main non-operating region 1 b.

The p-type low-dose region 63′ that is directly beneath the OC pad 22, similarly to the first embodiment, is disposed to be separate from the sensing effective region 12 a and surround a periphery of the sensing effective region 12 a in a substantially rectangular shape. In a region between the p-type low-dose region 63′ that is directly beneath the gate pad 21 b and the p-type low-dose region 63′ that is directly beneath the OC pad 22, unit cells of the main semiconductor element 11 may be disposed and a region between the p-type low-dose regions 63′ may be set as the main effective region 1 a′.

The third embodiment is applicable to the semiconductor device 20 according to the first embodiment (FIGS. 1 to 7). In other words, on the semiconductor substrate 10 having the main semiconductor element 11, when a high-function portion other than the current sensing portion 12 is further disposed with the current sensing portion 12 as a circuit portion for protecting/controlling the main semiconductor element 11, the p-type low-dose regions 63′ may be provided to be separate from one another and directly beneath the electrode pads other than the source pad 21 a, respectively.

As described above, according to the third embodiment, even when the p-type low-dose regions are provided to be separate from one another and directly beneath the electrode pads other than the source pad, respectively, effects similar to those of the first and the second embodiments may be obtained.

A semiconductor device according to a fourth embodiment will be described. FIG. 17 is a plan view of a layout when the semiconductor device according to the fourth embodiment is viewed from the front side of the semiconductor substrate. A semiconductor device 20′ according to the fourth embodiment differs from the semiconductor device 20 according to the first embodiment (refer to FIGS. 1 to 7) in that the semiconductor device 20′ includes a metal electrode (hereinafter, lead-out electrode) 18 that leads positive hole current generated by the n⁻-type drift region 32 near the main non-operating region 1 b to a grounding point GND of a ground potential.

The lead-out electrode 18, in the main non-operating region 1 b, is provided on the front surface of the semiconductor substrate 10 and is electrically connected to the p-type low-dose region 63. The lead-out electrode 18 is fixed at the electric potential (the source electric potential: the ground potential) of the source pad 21 a. The lead-out electrode 18, for example, in an outer peripheral portion of the main non-operating region 1 b, is provided along a border between the main non-operating region 1 b and the edge termination region 2. The lead-out electrode 18, in contact holes of a non-depicted interlayer insulating film, is electrically connected to the p-type low-dose region 63 via p⁺⁺-type contact regions 19.

The p⁺⁺-type contact regions 19 are provided in surface regions of the semiconductor substrate 10, in the p-type low-dose region 63. In FIG. 17, while a case is depicted in which the p⁺⁺-type contact regions 19 are respectively formed between the gate pad 21 b and the edge termination region 2, and between the OC pad 22 and the edge termination region 2, the p⁺⁺-type contact region 19 suffices to be disposed between either thereof. Further, the p⁺⁺-type contact region 19 may be disposed between the anode pad 23 a and the edge termination region 2, and between the cathode pad 23 b and the edge termination region 2.

The lead-out electrode 18, when the parasitic diodes 16, 17 (refer to FIG. 8) of the active region 1 turn OFF, has a function of leading positive hole current that is generated by the n⁻-type drift region 32 of the main effective region 1 a and the edge termination region 2 and that flows into the main non-operating region 1 b, to the grounding point GND of the ground potential via the p-type low-dose region 63 and the p⁺⁺-type contact regions 19. In FIG. 17, an inner periphery of the lead-out electrode 18 is indicated by a dashed line. An outer periphery of the lead-out electrode 18 is the same as an outer periphery of the main non-operating region 1 b.

FIGS. 18 and 19 are plan views of other examples of the layout when the semiconductor device according to the fourth embodiment is viewed from the front side of the semiconductor substrate. The fourth embodiment may be applied to the semiconductor devices 91, 92 (FIGS. 15 and 16) according to the second and the third embodiments and as depicted in FIGS. 18 and 19, in semiconductor devices 91′, 92′ having only the main semiconductor element 11 and the current sensing portion 12 in the active region 1 of the single semiconductor substrate 10, the lead-out electrode 18 that is electrically connected to each of the p-type low-dose regions 63 may be disposed.

As described above, according to the fourth embodiment, effects similar to those of the first to the third embodiments may be obtained. Further, according to the fourth embodiment, in the main non-operating region, the lead-out electrode that is electrically connected to the p-type low-dose region that is fixed at the source electric potential is provided, whereby when the parasitic diode of the active region turns OFF, positive hole current that flows into the main non-operating region is lead out from the lead-out electrode, thereby further enabling the reverse recovery resistance of the parasitic diode in the main non-operating region to be enhanced.

A semiconductor device according to a fifth embodiment will be described. FIG. 20 is a cross-sectional view of a configuration of the semiconductor device according to the fifth embodiment. A layout when the semiconductor device according to the fifth embodiment is viewed from the front surface of the semiconductor substrate is similar to that of the first embodiment (FIG. 1). In FIG. 20, while a cross-section of the structure directly beneath the anode pad 23 a and the cathode pad 23 b of the temperature sensing portion 13 is not depicted, a cross-section of the structure directly beneath the anode pad 23 a and the cathode pad 23 b is similar to that directly beneath the gate pad 21 b.

A semiconductor device 94 according to the fifth embodiment differs from the semiconductor device 20 according to the first embodiment (refer to FIGS. 1 to 7) in that a unit cell of the main semiconductor element 11 is disposed directly beneath a portion other than the OC pad 22. The fifth embodiment is applicable to the semiconductor devices 91, 92, 20′, 91′, 92′) according to the second to the fourth embodiments (FIGS. 15 to 19) and a unit cell of the main semiconductor element 11 may be disposed directly beneath a portion of the main non-operating region 1 b excluding the OC pad 22.

Reverse recovery resistance of the semiconductor device 20 according to the first embodiment was verified. FIG. 21 is a characteristics diagram of an amount of interrupting current due to reverse recovery resistance of an example. FIG. 21 depicts results of comparison of the amounts of positive hole current (interrupting current) passing through p-type base regions of the main effective region and out to the source pad in the semiconductor device 20 according to the first embodiment described above (hereinafter, example, refer to FIG. 1) and in the conventional semiconductor device 120 (hereinafter, conventional example, refer to FIG. 22), when a parasitic diode of the active region is OFF.

As depicted in FIG. 21, in the example, it was confirmed that the amount of positive hole current passing through the p-type base region 34 a of the main effective region 1 a and out to the source pad 21 a when the parasitic diodes 16, 17 (refer to FIG. 8) of the active region 1 turned OFF, was greater as compared to the conventional example. In the example, in the current sensing portion 12, the p-type region per unit area is less than that in the main semiconductor element 11, enabling the amount of positive hole current generated in the n⁻-type drift region 32 of the current sensing portion 12 to be reduced and the forward voltage of the parasitic diode to be increased. Therefore, an inflow of excess current into the current sensing portion 12 when the parasitic diodes turn OFF is prevented, whereby electric field is mitigated, the ESD capability of the current sensing portion is increased, and the reverse recovery resistance of the parasitic diode of the current sensing portion 12 is enhanced.

While not depicted, the inventor confirmed that effects similar to those of the example are also obtained in the semiconductor devices 91, 92, 20′, 91′, 92′, 93 according to the second to the fifth embodiments.

In the foregoing, in the present invention, without limitation to the described embodiments, various modifications within a range not departing from the spirit of the invention are possible. For example, in the active region, arrangement of the main non-operating region may be variously changed; and the main non-operating region may be disposed near a center of the active region and a periphery thereof may be surrounded by the main effective region. Further, for example, instead of a trench gate structure, a planar gate structure may be provided. Further, the present invention is further applicable when instead of using silicon carbide as a semiconductor material, a wide bandgap semiconductor other than silicon carbide is used as a semiconductor material. Further, the present invention is similarly implemented when the conductivity types (n-type, p-type) are reversed.

According to the invention described above, the ratio of the area of the first connecting regions is set to be greater than the ratio of the area of the second connecting regions. As a result, in the current sensing portion, a p-type region per unit area is less than that in the main semiconductor element, enabling the positive hole current (reverse recovery current of a parasitic diode of the current sensing portion) generated in the n⁻-type drift region of the current sensing portion to be reduced and the forward voltage of the parasitic diode to be increased. With such a configuration, excess current when the parasitic diode turns OFF does not flow into the current sensing portion, the ESD capability of the current sensing portion increases, and the reverse recovery resistance may be improved.

The semiconductor device according to the present invention achieves an effect in that in a semiconductor device that includes a current sensing portion on a semiconductor substrate having a main semiconductor element, reverse recovery resistance of a parasitic diode may be enhanced.

As described above, the semiconductor device according to the present invention is useful for semiconductor devices that include a current sensing portion on a semiconductor substrate having a main semiconductor element.

Although the invention has been described with respect to a specific embodiment for a complete and clear disclosure, the appended claims are not to be thus limited but are to be construed as embodying all modifications and alternative constructions that may occur to one skilled in the art which fairly fall within the basic teaching herein set forth. 

What is claimed is:
 1. A semiconductor device, comprising: a semiconductor substrate containing a semiconductor material having a bandgap wider than that of silicon, and having a first main surface and a second main surface opposite to the first main surface; a first first-conductivity-type region of a first conductivity type, provided in the semiconductor substrate; a first second-conductivity-type region of a second conductivity type, provided between the first main surface of the semiconductor substrate and the first first-conductivity-type region; a plurality of first trenches in the shape of stripes penetrating the first second-conductivity-type region from the first main surface of the semiconductor substrate and reaching the first first-conductivity-type region; a plurality of first second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of first second-conductivity-type high-concentration regions being provided between and in contact with the first second-conductivity-type region and the first first-conductivity-type region in a depth direction orthogonal to the first main surface of the substrate, between a corresponding pair of adjacent first trenches of the plurality of first trenches in a direction parallel to the first main surface, the each of the plurality of first second-conductivity-type high-concentration regions having an impurity concentration higher than an impurity concentration of the first second-conductivity-type region; a plurality of second second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of second second-conductivity-type high-concentration regions being provided in the first first-conductivity-type region, and facing a corresponding one of the plurality of first trenches in the depth direction; a plurality of first connecting regions each connecting a corresponding one of the first second-conductivity-type high-concentration regions and a corresponding one of the plurality of the second second-conductivity-type high-concentration regions; a first insulated gate field effect transistor having the first first-conductivity-type region as a drift region and the first second-conductivity-type region as a base region, the first insulated gate field effect transistor being constituted by a plurality of cell units each having a cell structure; a first source pad of the first insulated gate field effect transistor, provided on the first main surface of the semiconductor substrate, and electrically connected to the first second-conductivity-type region; a second second-conductivity-type region of the second conductivity type, provided in a region different from the first second-conductivity-type region and between the first main surface of the semiconductor substrate and the first first-conductivity-type region; a plurality of second trenches in the shape of stripes penetrating the second second-conductivity-type region from the first main surface of the semiconductor substrate and reaching the first first-conductivity-type region; a plurality of third second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of third second-conductivity-type high-concentration regions being provided between and in contact with the second second-conductivity-type region and the first first-conductivity-type region in the depth direction, between a corresponding pair of adjacent second trenches of the plurality of second trenches in the direction parallel to the first main surface, the each of the plurality of third second-conductivity-type high-concentration regions having an impurity concentration higher than an impurity concentration of the second second-conductivity-type region; a plurality of fourth second-conductivity-type high-concentration regions of the second conductivity type, each of the plurality of fourth second-conductivity-type high-concentration regions being provided in the first first-conductivity-type region, and facing a corresponding one of the plurality of second trenches in the depth direction; a plurality of second connecting regions each connecting a corresponding one of the plurality of third second-conductivity-type high-concentration regions and a corresponding one of the plurality of fourth second-conductivity-type high-concentration regions; a second insulated gate field effect transistor having the first first-conductivity-type region as a drift region and the second second-conductivity-type region as a base region, the second insulated gate field effect transistor being constituted by a plurality of cell units each having a cell structure same as the cell structure of the each of the plurality of unit cells of the first insulated gate field effect transistor, a total number of the plurality of unit cells of the second insulated gate field effect transistor being smaller than a total number of the plurality of unit cells of the first insulated gate field effect transistor; a second source pad of the second insulated gate field effect transistor, provided on the first main surface of the semiconductor substrate to be separate from the first source pad and electrically connected to the second second-conductivity-type region; and a drain electrode that is common to the first insulated gate field effect transistor and the second insulated gate field effect transistor, and electrically connected to the second main surface of the semiconductor substrate, wherein a ratio of an area of the plurality of first connecting regions to an area of the plurality of the second second-conductivity-type high-concentration regions is greater than a ratio of an area of the plurality of second connecting regions to an area of the plurality of fourth second-conductivity-type high-concentration regions.
 2. The semiconductor device according to claim 1, wherein a first length of each of the plurality of first connecting regions in a direction in which each of the plurality of first trenches extends is wider than a second length of each of the plurality of second connecting regions in a direction in which each of the plurality of second trenches extends.
 3. The semiconductor device according to claim 2, wherein the first length is at least two times the second length.
 4. The semiconductor device according to claim 1, wherein a total number of the plurality of the first connecting regions is greater than a total number of the plurality of the second connecting regions.
 5. The semiconductor device according to claim 4, wherein the total number of the plurality of the first connecting regions is at least two times greater than the total number of the plurality of the second connecting regions.
 6. The semiconductor device according to claim 1, wherein the second insulated gate field effect transistor detects overcurrent flowing in the first insulated gate field effect transistor. 